BLF6G10LS-200,112 NXP Semiconductors, BLF6G10LS-200,112 Datasheet - Page 58
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G10LS-200,112
Manufacturer Part Number
BLF6G10LS-200,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G10LS-200,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
20.2dB
Voltage - Rated
65V
Current Rating
49A
Current - Test
1.4A
Voltage - Test
28V
Power - Output
40W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
49 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060895112
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
BLF6G10LS-200
RF
Wideband linear mixer
MMIC: low-noise wideband amplifiers
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/mmics
5
(1)
(1)
Product
BGA2022
Product
BGA2001
BGA2003
BGA2011
BGA2012
Gain = G
MSG
(2)
Adjustable bias
C
conversion gain
Package
SOT343R
SOT343R
SOT363
SOT363
Package
SOT363
(3)
|S
21
|
2
2.5
2.5
VS
(V)
3
3
VS
(V)
3
@
Is (mA)
10
15
@
4
7
(2)
(mA)
Is
6
(dB)
1.3
1.8
1.5
NF
800-2500
RF input
range
@ 900 MHz
freq
Gain
19
(dB)
22
24
(1)
(1)
(3)
50-500
ouput
range
freq
(dBm)
IF
–7.4
–6.5
IIP3
10
(dB)
(dB)
NF
NF
1.3
1.8
1.7
9
@ 1800 MHz
@ 880 MHz
19.5
Gain
Gain
(dB)
16
16
(dB)
5
(1)
(3)
(1)
(1)
(dBm)
–4.5
–4.8
IIP3
10
(dBm)
OIP3
4
100 MHz
20
26
24
22
(dB)
NF
9
GHz
17.1
18.6
14.8
18.2
1.0
Gain
@ 2450 MHz
Gain
(dB)
(3)
6
(dB) @
2.6 GHz
(1)
11.6
11.1
11.6
8
(dBm)
OIP3
10
3.0 GHz
10.7
10.7
10.5
6.5
(V)
Vs
4
4.5
4.5
4.5
4.5
Vs
(V)
Limits
(mA)
Is (mA)
Limits
10
Is
30
30
30
15
Ptot (mW)
(mW)
Ptot
135
135
135
40
70