BLF1822-10,112 NXP Semiconductors, BLF1822-10,112 Datasheet

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BLF1822-10,112

Manufacturer Part Number
BLF1822-10,112
Description
TRANSISTOR UHF PWR LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF1822-10,112

Transistor Type
LDMOS
Frequency
2.2GHz
Gain
11dB
Voltage - Rated
65V
Current Rating
2.2A
Current - Test
85mA
Voltage - Test
26V
Power - Output
10W
Package / Case
SOT467C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
2.2A
Drain Source Voltage (max)
65V
Output Power (max)
10W
Power Gain (typ)@vds
18.5@26VdB
Frequency (max)
2.2GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
13@26VpF
Output Capacitance (typ)@vds
11@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
39%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934056582112
Product specification
Supersedes data of 2002 Mar 12
DATA SHEET
BLF1822-10
UHF power LDMOS transistor
DISCRETE SEMICONDUCTORS
M3D381
2003 Feb 10

Related parts for BLF1822-10,112

BLF1822-10,112 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 M3D381 2003 Feb 10 ...

Page 2

... For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 PINNING - SOT467C (MHz) (V) (mA) = 2200 (PEP) >11; typ. 13.5 >30; typ 960 (PEP) 2 CAUTION 2 Product specification BLF1822-10 PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange Top view MBK584 Fig.1 Simplified outline (W) (dB) (%) typ. 18.5 typ ...

Page 3

... C feedback capacitance rs 2003 Feb 10 PARAMETER PARAMETER CONDITIONS 0 GSth MHz MHz MHz Product specification BLF1822-10 MIN. MAX 2.2 65 +150 200 CONDITIONS VALUE note 1 mb 0.5 MIN. TYP 2 0.75 A 0.5 = 0. 0.5 UNIT UNIT 5 K/W K/W MAX. UNIT 1 ...

Page 4

... APPLICATION INFORMATION 2.2 GHz RF performance in a common source class-AB circuit. T MODE OF OPERATION CW, class-AB (2-tone 2200 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2200 MHz at rated load power handbook, halfpage C (pF) ...

Page 5

... Feb 10 MGW644 handbook, halfpage (PEP) ( 2200 MHz Fig.5 MGW646 handbook, halfpage (dBc (PEP) ( 2200 MHz (1) I Fig.7 5 Product specification BLF1822- (dB (PEP 2200.1 MHz. 2 Power gain and efficiency as functions of peak envelope load power; typical values (1) (2) (3) 60 ...

Page 6

... V gate input 2003 Feb 10 MGW648 handbook, halfpage 2.1 2.2 f (GHz Impedance measured at reference planes. Fig Fig.10 Class-AB test circuit for 2.2 GHz. 6 BLF1822- 1.8 1 Load impedance as a function of frequency (series components); typical values. C18 C19 L10 C13 C14 C11 ...

Page 7

... The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric ( thickness 0.51 mm. 2003 Feb 10 DESCRIPTION 0 100 100 58.1 11.3 11.3 52.8 50 64.7 390 ; 0 Product specification BLF1822-10 VALUE DIMENSIONS CATALOGUE NO. 2222 581 16641 2222 036 90094 2222 037 58101 1.4 mm 5.5 1 ...

Page 8

... The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2003 Feb gate BLF1822-10 2.2 GHz output BLF1822-10 2.2 GHz output 33 8 Product specification BLF1822-10 C18 C20 C17 C19 V DD L10 C11 C12 ...

Page 9

... APPLICATION INFORMATION 960 MHz RF performance in a common source class-AB circuit. T MODE OF OPERATION CW, class-AB (2-tone 960 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 960 MHz at rated load power handbook, halfpage G p (dB) ...

Page 10

... L1 L2 2003 Feb 10 MGW654 handbook, halfpage 1100 1200 f (MHz Impedance measured at reference planes. Fig.15 Load impedance as a function of frequency R2 C17 R1 C16 L4 L10 Fig.16 Class-AB test circuit for 960 MHz. 10 BLF1822- 800 900 1000 = mA (series components); typical values. C15 C14 L12 C9 C10 ...

Page 11

... The striplines are on a double copper-clad printed-circuit board with Rogers 4350 dielectric ( 0.76 mm. 2003 Feb 10 DESCRIPTION 0 0.6 to 4.5 pF 100 6.8 F 100 nF 100 19 24.5 19 64 Product specification BLF1822-10 VALUE DIMENSIONS CATALOGUE NO. size 0805 size 0805 2222 581 16641 2222 037 58101 7.5 1.57 mm 34.5 1. 1.57 mm 9.5 1.57 mm 2.2 4 27 ...

Page 12

... The other side is unetched and serves as a ground plane. Fig.17 Component layout for 960 MHz class-AB test circuit. 2003 Feb 10 C17 C18 C15 R2 R1 C16 Product specification BLF1822-10 C14 C12 C13 C11 V DD L12 C9 C10 BLF1822-10 960 MHz output BLF1822-10 960 MHz output 50 MGW657 = 3.81), thickness 0.76 mm ...

Page 13

... REFERENCES JEDEC EIAJ 13 Product specification BLF1822- 2.21 20.45 5.97 14.27 0.25 1.96 20.19 5.72 0.087 0.805 0.235 ...

Page 14

... Product specification BLF1822-10 DEFINITION These products are not Philips Semiconductors ...

Page 15

... Philips Semiconductors UHF power LDMOS transistor 2003 Feb 10 NOTES 15 Product specification BLF1822-10 ...

Page 16

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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