BLF1822-10,112 NXP Semiconductors, BLF1822-10,112 Datasheet - Page 10

• Manufacturer Part Number: BLF1822-10,112
• Description: TRANSISTOR UHF PWR LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1822-10,112

• Transistor Type: LDMOS
• Frequency: 2.2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 18.5@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 39%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934056582112

Philips Semiconductors
2003 Feb 10
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Impedance measured at reference planes.
Fig.14 Input impedance as a function of frequency
DS
( )
50
input
Z i
= 26 V; I
12
4
0
4
8
800
(series components); typical values.
L1
DQ
V gate
= 85 mA; P
C1
900
C19
L
= 10 W; T
x i
r i
1000
L2
C18
h
R2
C16
C2
25 C.
1100
Fig.16 Class-AB test circuit for 960 MHz.
C17
f (MHz)
MGW654
R1
L3
1200
C4
L4
L5
L6
C3
L10
10
L7
handbook, halfpage
V
Impedance measured at reference planes.
Fig.15 Load impedance as a function of frequency
DS
C5
( )
Z L
= 26 V; I
10
8
6
4
2
0
L11
800
(series components); typical values.
L8
C6
DQ
= 85 mA; P
900
C7
L12
L
= 10 W; T
C8
1000
C15
C9
R L
X L
L9
h
MGW656
25 C.
C14
C10
output
50
BLF1822-10
Product specification
1100
f (MHz)
C13
C11
MGW655
1200
C12
V DD