BLF1822-10,112 NXP Semiconductors, BLF1822-10,112 Datasheet - Page 3

• Manufacturer Part Number: BLF1822-10,112
• Description: TRANSISTOR UHF PWR LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1822-10,112

• Transistor Type: LDMOS
• Frequency: 2.2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 18.5@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 39%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934056582112

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
2003 Feb 10
V
V
I
T
T
R
R
V
V
I
I
I
g
R
C
C
C
D
j
DSS
DSX
GSS
fs
stg
j
SYMBOL
SYMBOL
DS
GS
(BR)DSS
GSth
th j-mb
th mb-h
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF power LDMOS transistor
SYMBOL
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= 10 V; I
= 0; V
= 0; V
= 0; V
3
GSth
CONDITIONS
D
DS
DS
DS
DS
= 0.2 mA
+ 9 V; V
D
D
D
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 20 mA
= 0.75 A
= 0.75 A
DS
T
mb
= 0
DS
= 25 C; note 1
CONDITIONS
= 10 V
65
MIN.
65
4
2.8
MIN.
0.5
1.2
13
11
0.5
65
2.2
+150
200
TYP.
VALUE
15
MAX.
BLF1822-10
Product specification
0.5
5
5
1.5
40
MAX.
V
V
A
C
C
UNIT
UNIT
K/W
K/W
V
V
A
nA
S
pF
pF
pF
UNIT
A