BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 2

• Manufacturer Part Number: BFQ67,215
• Description: TRANS NPN 50MA 10V 8GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFQ67,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1647-2; 933677740215; BFQ67 T/R

NXP Semiconductors
FEATURES
 High power gain
 Low noise figure
 High transition frequency
 Gold metallization ensures
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Aug 27
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
excellent reliability.
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN
1
2
3
open emitter
open base
T
I
open base
I
I
I
open emitter
open collector
T
C
C
C
C
s
s
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
 97 C; note 1
 97 C; note 1
base
emitter
collector
DESCRIPTION
CE
CONDITIONS
CONDITIONS
CE
CE
CE
2
= 8 V; f = 1 GHz
= 5 V
= 8 V
= 8 V; f = 1 GHz
alfpage
Marking code: V2p.




60








65

MIN.
MIN.
Top view
1
Fig.1 SOT23.




100
8
14
1.3
TYP.
Product specification
20
10
2.5
50
300
+150
175
MAX.
3
20
10
50
300




MAX.
MSB003
BFQ67
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT