BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 2
![TRANS NPN 50MA 10V 8GHZ SOT23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BFQ67,215
Manufacturer Part Number
BFQ67,215
Description
TRANS NPN 50MA 10V 8GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ67215.pdf
(12 pages)
Specifications of BFQ67,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 15mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1647-2
933677740215
BFQ67 T/R
933677740215
BFQ67 T/R
NXP Semiconductors
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1998 Aug 27
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
FE
excellent reliability.
stg
j
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector tab.
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral
power gain
noise figure
PARAMETER
PARAMETER
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN
1
2
3
open emitter
open base
T
I
open base
I
I
I
open emitter
open collector
T
C
C
C
C
s
s
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
97 C; note 1
97 C; note 1
base
emitter
collector
DESCRIPTION
CE
CONDITIONS
CONDITIONS
CE
CE
CE
2
= 8 V; f = 1 GHz
= 5 V
= 8 V
= 8 V; f = 1 GHz
alfpage
Marking code: V2p.
60
65
MIN.
MIN.
Top view
1
Fig.1 SOT23.
100
8
14
1.3
TYP.
Product specification
20
10
2.5
50
300
+150
175
MAX.
3
20
10
50
300
MAX.
MSB003
BFQ67
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT