BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 8
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BFQ67,215
Manufacturer Part Number
BFQ67,215
Description
TRANS NPN 50MA 10V 8GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ67215.pdf
(12 pages)
Specifications of BFQ67,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
10V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1.3dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 15mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 15mA @ 5V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.05 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1647-2
933677740215
BFQ67 T/R
933677740215
BFQ67 T/R
NXP Semiconductors
1998 Aug 27
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 15 mA.
= 15 mA; Z
Fig.16 Common emitter reverse transmission coefficient (S
o
= 50 .
Fig.17 Common emitter output reflection coefficient (S
+ j
− j
180°
0
150°
0.2
0.2
150°
0.2
0.5
0.5
0.2
120°
120°
0.1
0.5
3 GHz
90°
90°
1
1
1
8
40 MHz
3 GHz
2
60°
60°
2
2
5
40 MHz
22
10
), typical values.
12
MBC966
), typical values.
30 o
30°
MBC965
5
5
10
10
∞
0°
+ ϕ
− ϕ
Product specification
BFQ67