BFQ67,215 NXP Semiconductors, BFQ67,215 Datasheet - Page 7

• Manufacturer Part Number: BFQ67,215
• Description: TRANS NPN 50MA 10V 8GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFQ67,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 15mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 15mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1647-2; 933677740215; BFQ67 T/R

NXP Semiconductors
1998 Aug 27
handbook, full pagewidth
handbook, full pagewidth
NPN 8 GHz wideband transistor
V
V
CE
CE
= 8 V; I
= 8 V; I
C
C
= 15 mA.
= 15 mA; Z
Fig.15 Common emitter forward transmission coefficient (S
o
= 50 .
Fig.14 Common emitter input reflection coefficient (S
+ j
− j
180°
0
0.2
0.2
150°
150°
0.2
0.5
0.5
0.2
40 MHz
120°
120°
0.1
3 GHz
90°
90°
1
7
1
1
3 GHz
2
40 MHz
60°
60°
2
2
5
11
), typical values.
10
21
MBC967
), typical values.
30°
30°
MBC968
5
5
10
10
∞
0°
+ ϕ
− ϕ
Product specification
BFQ67