BFR540,215 NXP Semiconductors, BFR540,215 Datasheet - Page 6
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BFR540,215
Manufacturer Part Number
BFR540,215
Description
TRANS NPN 120MA 15V 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
100 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1649-2
934018830215
BFR540 T/R
934018830215
BFR540 T/R
Philips Semiconductors
9397 750 13398
Product data sheet
Fig 7. Gain as a function of frequency; I
Fig 9. Minimum noise figure and associated available
F
gain
(dB)
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
V
V
gain as a function of collector current.
10
1
CE
CE
= 8 V; I
= 8 V.
MSG
2000
1000
900
500
G
C
UM
= 10 mA.
10
F
2
min
10
10
I
3
C
G
G
(mA)
max
ass
f (MHz)
f (MHz)
C
1000
900
2000
mra692
mra698
= 10 mA.
Rev. 05 — 1 September 2004
10
10
4
2
20
15
10
5
0
5
G
(dB)
ass
Fig 8. Gain as a function of frequency; I
Fig 10. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
V
V
gain as a function of frequency.
10
10
CE
CE
2
= 8 V; I
= 8 V.
I
C
(mA)
F
MSG
min
C
= 40 mA.
G
10
10
UM
10
40
NPN 9 GHz wideband transistor
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
40
10
3
G
ass
10
3
f (MHz)
G
max
f (MHz)
BFR540
C
mra693
mra699
= 40 mA.
10
10
4
4
15
10
20
5
0
5
G
(dB)
ass
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