BFR540,215 NXP Semiconductors, BFR540,215 Datasheet - Page 9
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BFR540,215
Manufacturer Part Number
BFR540,215
Description
TRANS NPN 120MA 15V 9GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR540215.pdf
(13 pages)
Specifications of BFR540,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2.4dB @ 900MHz
Power - Max
500mW
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 40mA, 8V
Current - Collector (ic) (max)
120mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
100 @ 40mA @ 8V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.12 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1649-2
934018830215
BFR540 T/R
934018830215
BFR540 T/R
Philips Semiconductors
9397 750 13398
Product data sheet
Fig 15. Common emitter reverse transmission coefficient (s
Fig 16. Common emitter output reflection coefficient (s
V
V
CE
CE
= 8 V; I
= 8 V; I
180
180
C
C
= 40 mA.
= 40 mA; Z
0.5
Rev. 05 — 1 September 2004
0
135
135
135
135
0.4
0.2
0.2
o
0.2
0.3
= 50 .
0.5
0.5
0.2
0.5
0.1
3 GHz
90
90
90
90
1
1
1
40 MHz
2
22
3 GHz
NPN 9 GHz wideband transistor
).
2
40 MHz
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
12
5
).
45
45
45
45
10
5
5
mra697
mra696
0
0
BFR540
1.0
0.8
0.6
0.4
0.2
0
1.0
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