BFR540,215 NXP Semiconductors, BFR540,215 Datasheet - Page 8

• Manufacturer Part Number: BFR540,215
• Description: TRANS NPN 120MA 15V 9GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR540,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2.4dB @ 900MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Current - Collector (ic) (max): 120mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 100 @ 40mA @ 8V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1649-2; 934018830215; BFR540 T/R

Philips Semiconductors
9397 750 13398
Product data sheet
Fig 13. Common emitter input reflection coefficient (s
Fig 14. Common emitter forward transmission coefficient (s
V
V
CE
CE
= 8 V; I
= 8 V; I
180
180
C
C
= 40 mA; Z
= 40 mA.
50
Rev. 05 — 1 September 2004
0
135
135
135
40 MHz
135
0.2
0.2
40
o
0.2
= 50 .
30
0.5
0.5
20
0.5
10
3 GHz
90
90
90
90
1
1
1
3 GHz
40 MHz
2
11
).
NPN 9 GHz wideband transistor
2
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
21
5
).
45
45
45
45
10
5
5
mra694
mra695
0
0
BFR540
1.0
0.8
0.6
0.4
0.2
0
1.0
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