BFR 182W E6327 Infineon Technologies, BFR 182W E6327 Datasheet - Page 2
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BFR 182W E6327
Manufacturer Part Number
BFR 182W E6327
Description
TRANSISTOR NPN RF 12V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BFR_182W_E6327.pdf
(7 pages)
Specifications of BFR 182W E6327
Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
19dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
70
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR 182W E6327
BFR182WE6327
BFR182WE6327INTR
BFR182WE6327XT
SP000011053
BFR182WE6327
BFR182WE6327INTR
BFR182WE6327XT
SP000011053
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
(verified by random sampling)
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CE
CB
EB
= 1 mA, I
= 10 mA, V
= 1 V, I
= 4 V, V
= 15 V, V
= 4 V, I
B
C
E
BE
= 0
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0 V, T
A
= 85 °C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
-
Values
typ.
100
1
5
1
-
-
max.
140
30
70
30
50
BFR182W
2010-04-06
-
Unit
V
nA
-