BFR 182W E6327 Infineon Technologies, BFR 182W E6327 Datasheet - Page 4
![TRANSISTOR NPN RF 12V SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BFR 182W E6327
Manufacturer Part Number
BFR 182W E6327
Description
TRANSISTOR NPN RF 12V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BFR_182W_E6327.pdf
(7 pages)
Specifications of BFR 182W E6327
Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
19dB
Power - Max
250mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
70
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
8000 MHz
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.035 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR 182W E6327
BFR182WE6327
BFR182WE6327INTR
BFR182WE6327XT
SP000011053
BFR182WE6327
BFR182WE6327INTR
BFR182WE6327XT
SP000011053
Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
300
200
150
100
50
-
0
2
1
0
10
0
/P
-7
totDC
20
10
-6
= ƒ (t
40
10
-5
p
60
)
10
-4
80
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
-3
100
= ƒ (T
10
-2
120 °C
S
)
t
s
T
p
S
150
10
0
4
Permissible Pulse Load R
K/W
10
10
10
3
2
1
10
-7
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
-3
10
BFR182W
2010-04-06
= ƒ (t
-2
t
s
p
p
)
10
0