BFR 182W E6327 Infineon Technologies, BFR 182W E6327 Datasheet - Page 5

• Manufacturer Part Number: BFR 182W E6327
• Description: TRANSISTOR NPN RF 12V SOT-323
• Manufacturer: Infineon Technologies

Specifications of BFR 182W E6327

• Package / Case: SOT-323
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 250mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 10mA, 8V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 70
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR 182W E6327; BFR182WE6327; BFR182WE6327INTR; BFR182WE6327XT; SP000011053

BFR182W
SPICE Parameter
For the SPICE model as well as for the S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
2010-04-06
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