MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 3

• Manufacturer Part Number: MPSH11
• Description: TRANSISTOR RF NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
2.4
1.8
1.2
0.6
0.1
10
3
0
0.8
0.6
0.4
0.2
1
0.1
25
1
0.1
Voltage vs Collector Current
V
Collector Cut-Off Current
CB
Base-Emitter Saturation
vs Ambient Temperature
- 40 °C
Reverse Bias Voltage
I
= 30V
T - AMBIENT TE MPE RATURE ( C)
C
50
A
REVERSE BIAS VOLTAGE (V)
- COLLE CTOR CURRENT ( mA)
Capacitance vs
25
1
75
1
C
C
ibo
CB
125 °
C
100
(continued)
10
= 10
f = 1.0 MHz
10
125
°
20 30
150
50
0.1
50
10
0.8
0.6
0.4
0.2
350
300
250
200
150
100
1
50
1
0.1
0.01
0
0
T = 25 C
A
Contours of Constant Gain
Base-Emitter ON Voltage vs
SOT-23
Bandwidth Product (f )
Ambient Temperature
Power Dissipation vs
25
º
I - COLLECTOR CURRENT (mA)
I
C
C
- 40 °C
Collector Current
0.1
- COLLECTOR CURRENT (mA)
TEMPERATURE ( C)
25
50
1
300 MHz
200 MHz
100 MHz
125 °
NPN RF Transistor
TO-92
C
75
1
100
°
10
V
10
CE
MPSH11/MMBTH11, Rev. B
T
125
= 5.0V
400 MHz
500 MHz
1000 MHz
800 MHz
700 MHz
900 MHz
600 MHz
(continued)
150
100
100