MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 8
![TRANSISTOR RF NPN TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
MPSH11
Manufacturer Part Number
MPSH11
Description
TRANSISTOR RF NPN TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH11.pdf
(8 pages)
Specifications of MPSH11
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
650 MHz (Min)
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.05 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 @ 4mA @ 10V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
245 mHz
Input into
50
Test Circuits
50
Input
RF
LO
in
in
200 mHz Output into
50
R.F. Beads
FIGURE 3: 200 MHz Conversion Gain Test Circuit
0.002 F
1000 pF
(continued)
V
AGC
300 pF
2.0 pF
FIGURE 2: 45 MHz Power Gain Circuit
2.2 K
1/2 W
47 K
1000 pF
390
1/2 W
L
1
1000 pF
V
BB
4.0-30 pF
1.1 pF
V
2K
CE
1000 pF
1000 pF
270
1/2 W
V
CE
20pF
V
= 15 V
CC
= 12 V
T1
T
1
L1 - Ohmite RFC Z235
T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50 primary
measures 1.5 K, -25 pF.
T1 - Q3 Toroid 4:1 ratio
8 turns Pri. 2 turns Sec.
NPN RF Transistor
50
Output
45 mHz Output
into 50
MPSH11/MMBTH11, Rev. B
}
(continued)
No. 22 wire
3