MPSH11 Fairchild Semiconductor, MPSH11 Datasheet - Page 6

• Manufacturer Part Number: MPSH11
• Description: TRANSISTOR RF NPN TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Common Emitter Y Parameters
10000
1000
35
30
25
20
15
10
1000
100
5
0
100
10
0
1
10
V
FIG. 2
0
f = 200 MHz
Power Gain and Noise Figure
0
CC
= 12V
Output Admittance vs
Output Admittance vs
I - COLLECTOR CURRENT (mA)
vs Collector Current
2
4
C
I - COLLECTOR CURRENT (mA)
4
Collector Current
Collector Voltage
V
C
g
CE
oe
- COLLECTOR VOLTAGE (V)
8
8
4
b
PG
NF
oe
12
12
g
6
oe
b
16
16
oe
V
f = 45 MHz
I = 7.0 mA
f = 45 MHz
C
8
CE
20
20
= 15V
10
24
24
(continued)
10000
28
26
24
22
20
18
0.5
0.2
0.1
1000
5
2
1
100
0
0
10
V
f = 200 MHz
50
CE
V
I = 7.0 mA
C
= 10V
CE
Output Admittance vs
I - COLLECTOR CURRENT (mA)
= 15V
vs Collector Current
I - COLLECTOR CURRENT (mA)
1
Output Admittance
C
2
C
Collector Current
Conversion Gain
100
vs Frequency
f - FREQUENCY (MHz)
2
4
b
NPN RF Transistor
b
oe
g
200
oe
oe
3
6
f
f
V
FIG. 1
f
LO
IF
O
CE
MPSH11/MMBTH11, Rev. B
500
= 45 MHz
= 200 MHz
= 245 MHz
= 15V
4
8
g
(continued)
oe
1000
5
10
3