BFG520,215 NXP Semiconductors, BFG520,215 Datasheet - Page 4

• Manufacturer Part Number: BFG520,215
• Description: TRANS NPN 15V 9GHZ SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG520,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 70mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Noise Figure (db Typ @ F): 1.6dB ~ 2.1dB @ 900MHz
• Dc Collector/base Gain Hfe Min: 120
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9 GHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 70 mA
• Power Dissipation: 300 mW
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 70mA
• Dc Current Gain (min): 60
• Frequency (max): 9GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-143R
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934018800215::BFG520 T/R::BFG520 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
I
h
C
C
C
f
G
F
P
ITO
V
d
SYMBOL
j
CBO
T
S
FE
2
L1
o
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
21
G
f
measured at f
V
f
measured at f
C
p
p
im
p
UM
UM
2
= 900 MHz; f
= 795.25 MHz; f
= 20 mA; V
= V
= 60 dB (DIN 45004B);
is the maximum unilateral power gain, assuming S
=
o
; V
10 log
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral
power gain (note 1)
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
q
= V
CE
(2p q)
(p q r)
q
------------------------------------------------------------- - dB.
o
PARAMETER
1
= 6 V; R
= 902 MHz;
6 dB; V
q
–
= 898 MHz and f
= 803.25 MHz; f
= 793.25 MHz
S
11
2
S
L
r
21
= 50
= V
1
2
o
–
S
6 dB;
22
f = 900 MHz; T
(2q p)
r
2
= 805.25 MHz;
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
note 3
I
T
E
C
C
E
C
C
C
C
C
C
C
amb
amb
amb
amb
s
s
s
amb
= 904 MHz.
= 0; V
= i
= 20 mA; V
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
Rev. 04 - 23 November 2007
=
=
=
e
c
= 25 C
= 25 C
= 25 C
= 25 C
= 25 C; f
opt
opt
opt
= 0; V
= 0; V
CB
CB
; I
; I
; I
amb
C
C
C
= 6 V
= 6 V; f = 1 MHz
CONDITIONS
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
= 25 C;
CE
CE
CE
CE
CE
CE
CE
amb
amb
amb
(p q)
12
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 25 C
= 6 V
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 6 V; R
= 6 V; V
is zero and
= 25 C
= 25 C
= 25 C
= 810 MHz
BFG520; BFG520/X; BFG520/XR
CE
CE
CE
o
L
= 6 V;
= 6 V;
= 75 mV;
= 6 V;
= 50 ;
60
17
MIN.
120
1
0.6
0.3
9
19
13
18
1.1
1.6
1.9
17
26
275
50
TYP.
Product specification
50
250
1.6
2.1
MAX.
4 of 14
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT