BFG10W/X,115 NXP Semiconductors, BFG10W/X,115 Datasheet - Page 11

• Manufacturer Part Number: BFG10W/X,115
• Description: TRANS NPN 10V 250MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 1.9GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036590115; BFG10W/X T/R; BFG10W/X T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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R77/01/pp11
Date of release: 1995 Sep 22