BFG10W/X,115 NXP Semiconductors, BFG10W/X,115 Datasheet - Page 6

• Manufacturer Part Number: BFG10W/X,115
• Description: TRANS NPN 10V 250MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 1.9GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036590115; BFG10W/X T/R; BFG10W/X T/R

NXP Semiconductors
List of components (see Fig.6)
Notes
1. V
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
1995 Sep 22
handbook, full pagewidth
TR1
C1, C4, C7
C2
C3
C5
C6
C8
C9
L1
L4
L2, L3
R1
R2
R3
COMPONENT
UHF power transistor
PCB RT5880, thickness 0.79 mm.
BE
at 1 mA must be 0.65 V.
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips multilayer capacitor
Philips capacitor
6 turns enamelled 0.7 mm copper wire
2 turns enamelled 0.7 mm copper wire
RF choke, Philips
metal film resistor
metal film resistor
metal film resistor
DESCRIPTION
C1
Fig.6 Class-AB test circuit at f = 900 MHz.
+V bias
R1
C2
TR1
C8
R2
C3
L1
L2
6
DUT
120 pF
6.8 pF
0.5 pF
1.2 pF
1.9 pF
1 nF, 10 V
1500 F, 10 V
275 
100 
10 
note 1
C4
R3
VALUE
+V CC
C5
L4
L3
C6
length 3.5 mm
length 3 mm
DIMENSIONS
C9
MBG428
C7
Product specification
BFG10W/X
2222 032 14152
4312 020 36690
CATALOGUE No.