BFG10W/X,115 NXP Semiconductors, BFG10W/X,115 Datasheet - Page 7

• Manufacturer Part Number: BFG10W/X,115
• Description: TRANS NPN 10V 250MA SOT343N
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 1.9GHz
• Power - Max: 400mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 5V
• Current - Collector (ic) (max): 250mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036590115; BFG10W/X T/R; BFG10W/X T/R

NXP Semiconductors
List of components (see Fig.6)
Notes
1. V
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
1995 Sep 22
handbook, full pagewidth
TR1
C1, C6, C7, C8
C2
C3
C4
C5
C9, C10
L1, L2
R1, R2
R3, R4
UHF power transistor
COMPONENT
PCB RT5880, thickness 0.79 mm.
BE
at 1 mA must be 0.65 V.
+V bias
bias transistor, BC548 or equivalent
capacitor; notes 2 and 3
capacitor; note 2
capacitor; note 2
capacitor; note 2
capacitor; note 2
Philips capacitor
RF choke, Philips
metal film resistor
metal film resistor
R1
DESCRIPTION
C1
TR1
Fig.7 Class-AB test circuit at f = 1.9 GHz.
R2
C2
C7
L1
C3
7
DUT
24 pF
0.4 pF
2.4 pF
0.5 pF
1.2 pF
1500 F, 10 V
75 
10 
note 1
VALUE
C4
L2
C8
C9
C5
DIMENSIONS
MBG429
C6
C10
+V CC
Product specification
BFG10W/X
2222 032 14152
4330 030 36301
CATALOGUE No.