UPA808T-A CEL, UPA808T-A Datasheet

UPA808T-A

Manufacturer Part Number

UPA808T-A

Description

TRANSISTOR NPN 11GHZ SOT363

Manufacturer

CEL

Datasheet

1.UPA808T-T1-A.pdf (10 pages)

Specifications of UPA808T-A

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (max)

Frequency - Transition

11GHz

Noise Figure (db Typ @ F)

1.3dB ~ 2dB @ 2GHz

Power - Max

180mW

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 20mA, 2V

Current - Collector (ic) (max)

30mA

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Dc Collector/base Gain Hfe Min

Dc Current Gain Hfe Max

140

Mounting Style

SMD/SMT

Configuration

Single

Transistor Polarity

NPN

Emitter- Base Voltage Vebo

2 V

Continuous Collector Current

0.03 A

Power Dissipation

90 mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gain

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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DESCRIPTION

NEC's UPA808T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

various hand-held wireless applications.

ELECTRICAL CHARACTERISTICS

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• LOW CURRENT OPERATION

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

FEATURES

SYMBOLS

, low voltage bias and small size make this device suited for

FE1

2 NE687 Die in a 2 mm x 1.25 mm package

NF = 1.3 dB TYP at 2 GHz

Cre

CBO

EBO

21E

FE 1

21E

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA808T-T1, 3K per reel.

FE2

= 8.5 dB TYP at 2 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

Ratio:

PARAMETERS AND CONDITIONS

FE1

FE2

PACKAGE OUTLINE

= Smaller Value of Q

= Larger Value of Q

PART NUMBER

= 2 V, I

= 3 mA, f = 2 GHz

= 1 V, I

= 2 V, I

FREQUENCY TRANSISTOR

= 2 V, I

= 5 V, I

= 20 mA, f = 2 GHz

or Q

, or Q

=20 mA, f = 2 GHz

= 20 mA

= 0

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

OUTLINE DIMENSIONS

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

2.0 ± 0.2

0.9 ± 0.1

1.3

0.7

0.65

California Eastern Laboratories

MIN

0.85

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

UPA808T

TYP

S06

100

0.4

8.5

1.3

(Units in mm)

UPA808T

0.2 (All Leads)

0.15

MAX

140

0.1

0.8

+0.10

- 0.05

Related parts for UPA808T-A

UPA808T-A Summary of contents

Page 1

... FE2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... UPA808T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T 1 Die 2 Die T Junction Temperature J T Storage Temperature STG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ...

Page 3

... Collector Current, lc (mA) ORDERING INFORMATION PART NUMBER QUANTITY UPA808T-T1-A 3000 (T = 25˚ GHz 7 10 PACKAGING Tape & Reel UPA808T INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 MHz 0.6 0.4 0.2 0 2.0 4.0 6.0 8.0 ...

Page 4

... UPA808T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.963 -7.00 0.200 0.954 -16.20 0.400 0.907 -32.50 0.600 0.842 -47.90 ...

Page 5

... UPA808T MAG ANG 0.973 -9.20 0.185 0.933 -18.10 0.172 0.818 -32.10 0.305 0.704 -41.40 0.448 0.616 -47.40 0.576 0.553 -51 ...

Page 6

... UPA808T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.100 0.840 -15.00 0.200 0.786 -30.50 0.400 0.643 -57.00 0.600 0.508 -78.00 ...

Page 7

... UPA808T MAG ANG 0.969 -8.60 0.080 0.932 -16.90 0.200 0.825 -30.10 0.319 0.717 -39.00 0.452 0.632 -44.80 0.577 0.571 -48 ...

Page 8

... UPA808T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1, Q2 Parameters IS 8e-17 MJC BF 128 XCJC NF 1 CJS VAF 17 VJS IKF 0.18 MJS ISE 3.3e- 1. 9.05 XTF NR 1.05 VTF VAR 4.3 ITF IKR 0.009 PTF ISC 4e- 1 0.8 XTB RB 11.1 XTI RBM 2.46 ...

Page 9

... LE1 0.95 nH C_E1B2 0.1 pF LB2 0.05 pF 0.7 nH CCB2 Q2 0.26 pF 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 MODEL RANGE Frequency: Bias: Date: RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS LB 0.05 nH C_B1B2 0. 0.05 nH C_B2E2 0. LE2 0.05 nH 0.8 nH 0.1 to 3.0 GHz 10/98 UPA808T Pin_6 Pin_5 Pin_4 8/99 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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