UPA808T-A CEL, UPA808T-A Datasheet - Page 3

• Manufacturer Part Number: UPA808T-A
• Description: TRANSISTOR NPN 11GHZ SOT363
• Manufacturer: CEL

Specifications of UPA808T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 11GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 180mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 70
• Dc Current Gain Hfe Max: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 90 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
ORDERING INFORMATION
PART NUMBER
UPA808T-T1-A
15
10
5
1
3
2
1
f = 2 GHz
GAIN BANDWIDTH PRODUCT vs.
V
CE
1
= 1 V
COLLECTOR CURRENT
COLLECTOR CURRENT
Collector Current, lc (mA)
Collector Current, lc (mA)
V
NOISE FIGURE vs.
CE
2
= 2 V
2
QUANTITY
3
3000
3
5
5
f = 2 GHz
V
V
CE
CE
7
7
= 2 V
= 1 V
PACKAGING
10
10
Tape & Reel
(T
A
= 25˚C)
0.4
0.2
0.8
0.6
15
5
0
0
f = 2 GHz
COLLECTOR TO BASE VOLTAGE
Collector to Base Voltage, V
FEEDBACK CAPACITANCE vs.
INSERTION POWER GAIN vs.
1
2.0
COLLECTOR CURRENT
Collector Current, lc (mA)
4.0
2
3
6.0
5
f = 1 MHz
8.0
CB
V
V
CE
CE
7
(V)
= 2 V
= 1 V
UPA808T
10.0
10