UPA808T-A CEL, UPA808T-A Datasheet - Page 8

• Manufacturer Part Number: UPA808T-A
• Description: TRANSISTOR NPN 11GHZ SOT363
• Manufacturer: CEL

Specifications of UPA808T-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 11GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 180mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector/base Gain Hfe Min: 70
• Dc Current Gain Hfe Max: 140
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 90 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BJT NONLINEAR MODEL PARAMETERS
Note:
This nonlinear model utilized the latest data available.
See our Design Parameter Library at www.cel.com for this data.
NONLINEAR MODEL
(1) Gummel-Poon Model
UPA808T
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKR
ISC
IRB
IKF
ISE
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
0.415e-12
0.102e-12
3.3e-15
Q1, Q2
8e-17
0.009
4e-15
0.017
0.18
1.48
9.05
1.05
11.1
2.46
0.68
0.53
0.29
128
4.3
0.8
7.5
17
1.5
1
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Q1, Q2
6e-12
0.53
0.27
0.75
0.37
11.9
9.55
1.78
69.1
1e-9
1.11
0
0
0
3
0
1
(1)
UNITS
MODEL RANGE
Frequency:
Bias:
Date:
Parameter
time
capacitance
inductance
resistance
voltage
current
0.1 to 3.0 GHz
V
10/98
CE
= 0.5 V to 2 V, I
C
= 0.5 mA to 10 mA
seconds
henries
ohms
volts
amps
farads
Units