UPA828TD-A CEL, UPA828TD-A Datasheet

TRANSISTOR NPN SIL RF DUAL 6MINI

UPA828TD-A

Manufacturer Part Number
UPA828TD-A
Description
TRANSISTOR NPN SIL RF DUAL 6MINI
Manufacturer
CEL
Datasheet
1.UPA828TD-A.pdf (8 pages)

Specifications of UPA828TD-A

Transistor Type
2 NPN (Dual)
Voltage - Collector Emitter Breakdown (max)
3V
Frequency - Transition
11GHz
Noise Figure (db Typ @ F)
1.3dB ~ 2dB @ 2GHz
Power - Max
180mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 20mA, 2V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
6-MINIMOLD
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
<R>
Document No. PU10402EJ03V0DS (3rd edition)
Date Published February 2008 NS
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
• Built-in 2 transistors (2 × NE687)
• 6-pin lead-less minimold (M16, 1208 PKG)
BUILT-IN TRANSISTORS
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
3-pin thin-type ultra super minimold part No.
μ
μ
PA828TD
PA828TD-T3
Part Number
Remark To order evaluation samples, contact your nearby sales office.
f
NF = 1.3 dB TYP. @ V
T
= 9.0 GHz TYP., ⏐S
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The unit sample quantity is 50 pcs.
μ
μ
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
Order Number
PA828TD-A
PA828TD-T3-A
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
21e
CE
⏐
= 1 V, I
2
= 7.5 dB TYP. @ V
6-pin lead-less minimold
(M16, 1208 PKG) (Pb-Free)
C
= 3 mA, f = 2 GHz
The mark <R> shows major revised points.
Package
CE
= 1 V, I
NPN SILICON RF TWIN TRANSISTOR
C
Q1, Q2
NE687
= 10 mA, f = 2 GHz
50 pcs (Non reel)
10 kpcs/reel
Quantity
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base)
• 8 mm wide embossed taping
face the perforation side of the tape
μ
Supplying Form
PA828TD
2003, 2008

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UPA828TD-A Summary of contents

Page 1

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications = 9.0 GHz TYP., ⏐S ⏐ 7.5 dB TYP ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current Total Power Dissipation P tot Junction Temperature Storage Temperature T 2 × 1.0 mm (t) glass epoxy ...

Page 3

TYPICAL CHARACTERISTICS (T <R> TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Mounted on Glass Epoxy PCB (1.08 cm 250 200 2 Elements in total 180 150 Per Element 100 Ambient Temperature T COLLECTOR CURRENT ...

Page 4

DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz ...

Page 5

INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 16 MSG MAG 12 ...

Page 6

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 ...

Page 7

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 +0.07 0.8 –0. PIN CONNECTIONS Data Sheet PU10402EJ03V0DS μ PA828TD (Top View Collector (Q1) ...

Page 8

The information in this document is current as of February, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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