UPA828TD-A CEL, UPA828TD-A Datasheet - Page 3

• Manufacturer Part Number: UPA828TD-A
• Description: TRANSISTOR NPN SIL RF DUAL 6MINI
• Manufacturer: CEL

Specifications of UPA828TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 11GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 180mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: 6-MINIMOLD
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
0.0001
0.001
0.01
300
250
200
150
100
100
180
0.1
50
10
40
35
30
25
20
15
10
90
0
1
5
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500 A
2 Elements in total
Per Element
V
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
μ 450 A
= 1 V
Collector to Emitter Voltage V
0.5
25
Base to Emitter Voltage V
Ambient Temperature T
1
350 A
μ
400 A
0.6
50
μ
Mounted on Glass Epoxy PCB
(1.08 cm
μ
0.7
75
2
2
× 1.0 mm (t) )
300 A
100
0.8
μ
A
A
BE
(˚C)
3
= +25°C, unless otherwise specified)
CE
I
(V)
B
250 A
200 A
150 A
100 A
125
0.9
= 50 A
(V)
Data Sheet PU10402EJ03V0DS
μ
μ
μ
μ
μ
150
1.0
4
0.0001
0.001
0.01
100
0.5
0.4
0.3
0.2
0.1
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
1
0.6
2
0.7
3
0.8
BE
CB
μ
f = 1 MHz
(V)
(V)
PA828TD
4
0.9
1.0
5
3