UPA828TD-A CEL, UPA828TD-A Datasheet - Page 4

• Manufacturer Part Number: UPA828TD-A
• Description: TRANSISTOR NPN SIL RF DUAL 6MINI
• Manufacturer: CEL

Specifications of UPA828TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 11GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 180mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: 6-MINIMOLD
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4
Remark The graphs indicate nominal characteristics.
1 000
100
10
16
12
35
30
25
20
15
10
8
4
0
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 1 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
Frequency f (GHz)
1
|S
MSG
21e
|
2
10
1
C
C
MAG
10
(mA)
(mA)
V
I
C
V
CE
= 10 mA
CE
Data Sheet PU10402EJ03V0DS
= 1 V
= 1 V
100
100
10
1 000
100
10
16
12
35
30
25
20
15
10
8
4
0
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 2 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
Frequency f (GHz)
1
|S
MSG
21e
|
2
10
1
C
MAG
C
10
(mA)
(mA)
μ
PA828TD
V
I
C
CE
V
= 10 mA
CE
= 2 V
= 2 V
100
100
10