UPA828TD-A CEL, UPA828TD-A Datasheet - Page 2

• Manufacturer Part Number: UPA828TD-A
• Description: TRANSISTOR NPN SIL RF DUAL 6MINI
• Manufacturer: CEL

Specifications of UPA828TD-A

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (max): 3V
• Frequency - Transition: 11GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 2dB @ 2GHz
• Power - Max: 180mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: 6-MINIMOLD
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
DC Characterstics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characterstics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
h
FE
FE
Note Mounted on 1.08 cm
Notes 1. Pulse measurement: PW ≤ 350
Ratio
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded.
Parameter
Parameter
70 to 140
FB
kL
2
× 1.0 mm (t) glass epoxy PCB
h
h
Symbol
⏐S
⏐S
C
Symbol
P
FE
FE1
re
V
V
V
I
I
tot
NF
NF
T
CBO
EBO
f
f
21e
21e
Note 2
CBO
CEO
EBO
I
T
/h
Note 1
T
T
C
stg
Note
j
⏐
⏐
FE2
2
2
A
μ
A
= +25°C)
V
V
V
V
V
V
V
V
Z
V
Z
V
V
h
h
s, Duty Cycle ≤ 2%
Data Sheet PU10402EJ03V0DS
= +25°C)
FE1
FE2
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
CE
= Z
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 2 V, I
: Smaller value of Q1 and Q2,
: Larger value of Q1 and Q2
180 in 2 elements
90 in 1 element
opt
opt
−65 to +150
Ratings
Test Conditions
E
C
C
C
C
C
C
C
C
E
C
150
5.0
3.0
30
= 0 mA
= 0 mA
= 0 mA, f = 1 MHz
= 20 mA
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
= 20 mA,
2
Unit
mW
mA
°C
°C
V
V
V
MIN.
0.85
7.0
9.0
6.0
7.0
70
−
−
−
−
−
TYP.
11.0
9.0
7.5
8.5
1.3
1.3
0.4
−
−
−
−
MAX.
100
100
140
2.0
2.0
0.8
−
−
−
−
−
μ
PA828TD
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
−
−