BFS 17W E6327 Infineon Technologies, BFS 17W E6327 Datasheet - Page 4
![TRANSISTOR NPN RF 15V SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BFS 17W E6327
Manufacturer Part Number
BFS 17W E6327
Description
TRANSISTOR NPN RF 15V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BFS_17W_E6327.pdf
(7 pages)
Specifications of BFS 17W E6327
Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3.5dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
2.5 GHz
Collector- Emitter Voltage Vceo Max
15 V
Continuous Collector Current
0.025 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFS17WE6327
BFS17WE6327XT
SP000011082
BFS17WE6327XT
SP000011082
Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
10
320
240
200
160
120
80
40
-
0
3
2
1
0
10
0
/P
-6
totDC
15
10
30
-5
=
45
10
(t
p
-4
60
)
75
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
90 105 120
tot
10
= (T
-2
S
s
)
T
t
°C
p
S
150
10
0
4
Permissible Pulse Load R
Collector-base capacitance C
Emitter-base capacitance C
f = 1 MHz
K/W
10
10
10
10
pF
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
3
2
1
0
10
0
-7
2
CCB
10
-6
4
10
CEB
6
-5
8
10
-4
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
12
thJS
-3
eb
14
10
cb
2007-03-30
=
= (V
BFS17W
-2
= (V
16
(t
t
V
s
p
EB
p
V
CB
)
CB
)
, V
10
20
)
EB
0