BFS 17W E6327 Infineon Technologies, BFS 17W E6327 Datasheet - Page 5
![TRANSISTOR NPN RF 15V SOT-323](/photos/5/26/52615/pkg_sot-323_sml.jpg)
BFS 17W E6327
Manufacturer Part Number
BFS 17W E6327
Description
TRANSISTOR NPN RF 15V SOT-323
Manufacturer
Infineon Technologies
Datasheet
1.BFS_17W_E6327.pdf
(7 pages)
Specifications of BFS 17W E6327
Package / Case
SOT-323
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.4GHz
Noise Figure (db Typ @ F)
3.5dB ~ 5dB @ 800MHz
Power - Max
280mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
2.5 GHz
Collector- Emitter Voltage Vceo Max
15 V
Continuous Collector Current
0.025 A
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFS17WE6327
BFS17WE6327XT
SP000011082
BFS17WE6327XT
SP000011082
Transition frequency f
V
CE
GHz
= parameter
1.5
0.5
3
2
1
0
0
5
10
T
15
= (I
C
20
)
mA
0.7V
I
C
10V
5V
3V
2V
1V
30
5
2007-03-30
BFS17W