BFR 106 E6327 Infineon Technologies, BFR 106 E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 106 E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 106 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 8.5dB ~ 13dB
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 700 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR106E6327XT; SP000011044

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
f = 900 MHz
I
f = 1.8 GHz
C
C
C
CB
CE
EB
= 70 mA, V
= 20 mA, V
= 20 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
CE
CE
CE
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
S
S
BE
BE
CB
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
A
= 25°C, unless otherwise specified
,
,
3
Symbol
f
C
C
C
NF
T
cb
ce
eb
min
min.
3.5
-
-
-
-
-
Values
0.85
0.27
typ.
3.9
1.8
5
3
max.
1.2
2010-12-03
-
-
-
-
-
BFR106
Unit
GHz
pF
dB