BFR 106 E6327 Infineon Technologies, BFR 106 E6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 106 E6327
• Description: TRANSISTOR RF NPN 15V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 106 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
• Gain: 8.5dB ~ 13dB
• Power - Max: 700mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 70mA, 8V
• Current - Collector (ic) (max): 210mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 700 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR106E6327XT; SP000011044

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Power gain, maximum available
I
f = 900 MHz
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
Third order intercept point at output
V
Z
1dB Compression point
I
f = 0.9 GHz
1
2
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
IP
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
S
CE
= 70 mA, V
= 70 mA, V
= 70 mA, V
= 70 mA, V
=Z
= 70 mA, V
3
value depends on termination of all intermodulation frequency components.
= 8 V, I
L
=50 Ω
C
CE
CE
CE
CE
CE
= 70 mA, f = 0.9 GHz ,
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
S
S
S
S
S
=Z
= Z
= Z
= Z
= Z
L
=50 Ω ,
Sopt
Sopt
L
L
A
1)
= 50 Ω ,
= 50 Ω ,
= 25°C, unless otherwise specified
, Z
, Z
2)
L
L
= Z
= Z
Lopt
Lopt
,
,
4
Symbol
G
|S
IP
P
-1dB
ma
21e
3
|
2
min.
-
-
-
-
-
-
Values
10.5
typ.
8.5
13
31
22
5
max.
2010-12-03
-
-
-
-
-
-
BFR106
Unit
dB
dB
dBm