BFR 340F H6327 Infineon Technologies, BFR 340F H6327 Datasheet

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BFR 340F H6327

Manufacturer Part Number
BFR 340F H6327
Description
TRANS RF NPN 6V 20MA TSFP-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 340F H6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Gain
13dB ~ 28dB
Power - Max
75mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 5mA, 3V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
TSFP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR340FH6327XT
NPN Silicon RF Transistor
• General purpose Low Noise Amplifier
• Ideal for low current operation
• High breakdown voltage enables
• Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz
• Small package 1,2 x 1,2 mm
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFR340F
Maximum Ratings at T
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
operation in automotive applications
≤ 110°C
thJA
please refer to Application Note AN077 Thermal Resistance
1)
A
2)
= 25 °C, unless otherwise specified
2
Marking
FAs
with visible leads
1 = B
1
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
J
Stg
thJS
2 = E
3 = C
-55 ... 150
Value
Value
≤ 530
150
15
15
20
75
3
6
2
2
Package
TSFP-3
1
2010-05-17
BFR340F
2
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFR 340F H6327

BFR 340F H6327 Summary of contents

Page 1

NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current 25° ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) 1) Maximum power gain mA 1 100 MHz mA ...

Page 5

Total power dissipation Third order Intercept Point IP =50 Ω ) (Output parameter 1.9GHz CE 28 ...

Page 6

Power gain 1.8GHz V = parameter Insertion Power Gain | parameter CE 24 Ic=5mA ...

Page 7

Power gain parameter Third order Intercept Point IP =50 Ω ...

Page 8

Noise figure F = ƒ ( 1.5V =Parameter CE S Sopt C Source impedance for min. noise figure vs. frequency V = 1.5V, I =Parameter BFR340F 2010-05-17 ...

Page 9

SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR340F ...

Page 10

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 11

Datasheet Revision History: 17 May 2010 This datasheet replaces the revisions from 02 February 2010 and 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in ...

Page 12

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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