BFR 340F H6327 Infineon Technologies, BFR 340F H6327 Datasheet - Page 2
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BFR 340F H6327
Manufacturer Part Number
BFR 340F H6327
Description
TRANS RF NPN 6V 20MA TSFP-3
Manufacturer
Infineon Technologies
Datasheet
1.BFR_340F_H6327.pdf
(12 pages)
Specifications of BFR 340F H6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Gain
13dB ~ 28dB
Power - Max
75mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 5mA, 3V
Current - Collector (ic) (max)
20mA
Mounting Type
Surface Mount
Package / Case
TSFP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR340FH6327XT
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Verified by random sampling
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 1 V, I
= 4 V, V
= 10 V, V
= 4 V, I
B
C
E
CE
BE
= 0
= 0
= 0
BE
= 0, T
= 3 V, pulse measured
= 0, T
A
A
= 25°C
= 85°C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
90
6
-
-
-
-
Values
typ.
120
9
1
2
1
1
max.
500
160
30
50
30
2010-05-17
BFR340F
-
Unit
V
nA
-