BFR 340F H6327 Infineon Technologies, BFR 340F H6327 Datasheet - Page 4

• Manufacturer Part Number: BFR 340F H6327
• Description: TRANS RF NPN 6V 20MA TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 340F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
• Gain: 13dB ~ 28dB
• Power - Max: 75mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 5mA, 3V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR340FH6327XT

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Maximum power gain
I
f = 100 MHz
I
f = 1.8 GHz
f = 3 GHz
Transducer gain
I
f = 100 MHz
I
f = 1.8 GHz
f = 3 GHz
Third order intercept point at output
V
Z
V
Z
1dB compression point at output
V
V
1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = | S 21e / S 12e |
IP3 value depends on termination of all intermodulation frequency components.
S
S
CE
CE
CE
CE
= 3 mA, V
= 5 mA, V
= 3 mA, V
= 5 mA, V
= Z
= Z
= 3 V, I
= 3 V, I
= 3V, I
= 3V, I
L
L
= 50 Ω
= 50 Ω
C
C
C
C
CE
CE
CE
CE
= 5 mA, Z
= 5 mA, Z
= 5 mA, f = 100 MHz,
= 5 mA, f = 1.8 GHz,
= 1.5 V, Z
= 3 V, Z
= 1.5 V, Z
= 3 V, Z
1)
S
S
S
S
= Z
= Z
S
= Z
S
= Z
= Z
= Z
L
L
Sopt,
L
= 50 Ω
= 50 Ω
= 50 Ω ,
Sopt,
L
A
= 50 Ω ,
= 25°C, unless otherwise specified
Z
L
2)
Z
,
,
f = 100 MHz
f = 1
= Z
L
= Z
Lopt
.
8 GHz
Lopt
,
,
4
Symbol
G
|S
IP
P
-1dB
max
21e
3
|
2
min.
-
-
-
-
-
-
-
-
-
-
Values
16.5
typ.
28
13
19
14
10
14
13
-3
-1
max.
2010-05-17
BFR340F
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dBm