BFP 640 H6433 Infineon Technologies, BFP 640 H6433 Datasheet

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BFP 640 H6433

Manufacturer Part Number
BFP 640 H6433
Description
TRANS RF NPN 4V 50MA SOT343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 640 H6433

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.5V
Frequency - Transition
40GHz
Noise Figure (db Typ @ F)
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain
24dB
Power - Max
200mW
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 30mA, 3V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPN Silicon Germanium RF Transistor
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP640
1
Pb-containing package may be available upon special request
High gain low noise RF transistor
Provides outstanding performance
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.65 dB at 1.8 GHz
High maximum stable gain
Gold metallization for extra high reliability
70 GHz f
Pb-free (RoHS compliant) package
Qualified according AEC Q101
for a wide range of wireless applications
Outstanding noise figure F = 1.2 dB at 6 GHz
G
ms
= 24 dB at 1.8 GHz
T
-Silicon Germanium technology
Marking
R4s
1=B
1)
2=E
Pin Configuration
3=C
1
4=E
-
4
-
3
Package
SOT343
2007-05-29
BFP640
1
2

Related parts for BFP 640 H6433

BFP 640 H6433 Summary of contents

Page 1

NPN Silicon Germanium RF Transistor High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications Outstanding noise figure 1.8 GHz Outstanding noise figure ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage T > 0 ° °C A Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current 1) Total power dissipation T 90°C S Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

... BFP640_Chip B B LBB LBC CBEC LEC CBE I CBEO T = 25°C Itf = 400 6.5e-3 * (T-25) + 1.0e-5 * (T-25)^2 ) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com - BF = 450 A IKF = 0. ...

Page 5

Total power dissipation P tot 220 mW 180 160 140 120 100 105 120 ° Permissible Pulse Load totmax totDC p ...

Page 6

Third order Intercept Point IP (Output = parameter 1.8 GHz CE 30 dBm Power gain ...

Page 7

Power gain 30mA parameter 0.5 1 1.5 2 2.5 3 Noise figure ...

Page 8

Source impedance for min. noise figure vs. frequency mA 1.5 0.5 0.4 0.3 0.2 2.4GHz 1.8GHz 0.1 3GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 2 4GHz 0 ...

Page 9

Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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