BFP 640 H6433 Infineon Technologies, BFP 640 H6433 Datasheet - Page 2

• Manufacturer Part Number: BFP 640 H6433
• Description: TRANS RF NPN 4V 50MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 640 H6433

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
2
C
C
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
A
A
S
CE
CB
EB
= 1 mA, I
= 30 mA, V
> 0 °C
= 0.5 V, I
= 13 V, V
= 5 V, I
0 °C
90°C
B
E
= 0
C
= 0
CE
BE
= 0
thJA
= 3 V, pulse measured
= 0
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
110
4
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
200
150
typ.
180
4.5
3.7
1.2
13
13
50
300
4
3
-
-
-
max.
2007-05-29
100
270
30
3
-
BFP640
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W