BFP 640 H6433 Infineon Technologies, BFP 640 H6433 Datasheet - Page 5

• Manufacturer Part Number: BFP 640 H6433
• Description: TRANS RF NPN 4V 50MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BFP 640 H6433

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 40GHz
• Noise Figure (db Typ @ F): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
• Gain: 24dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 30mA, 3V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
220
180
160
140
120
100
80
60
40
20
-
0
1
0
10
0
/ P
-7
totDC
15
10
30
-6
=
10
45
-5
( t
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
p
60
)
10
-4
75
10
90 105 120 °C
tot
-3
= ( T
10
-2
S
)
T
t
s
p
S
150
10
0
5
Permissible Pulse Load R
Collector-base capacitance C
f = 1MHz
K/W
0.25
0.15
0.05
10
10
10
pF
0.1
0
3
2
1
10
0
-7
10
2
-6
10
4
-5
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
6
-4
10
8
thJS
-3
2007-05-29
10
10
cb
=
-2
= ( V
BFP640
( t
V
t
V
p
s
p
)
CB
CB
10
14
)
0