BFG 193 E6433 Infineon Technologies, BFG 193 E6433 Datasheet
BFG 193 E6433
Specifications of BFG 193 E6433
BFG193E6433XT
SP000010994
Related parts for BFG 193 E6433
BFG 193 E6433 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain amplifiers GHz For linear broadband amplifiers GHz 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 700 mW 600 550 500 450 400 350 300 250 200 150 100 Permissible Pulse Load totmax totDC ...
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Package Outline A 0.7 Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0.2 3 ±0 2.3 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...