BFG 193 E6433 Infineon Technologies, BFG 193 E6433 Datasheet - Page 4

• Manufacturer Part Number: BFG 193 E6433
• Description: TRANSISTOR RF NPN 12V SOT-223
• Manufacturer: Infineon Technologies

Specifications of BFG 193 E6433

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 10.5dB ~ 16dB
• Power - Max: 600mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 8 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Continuous Collector Current: 0.08 A
• Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BFG193E6433T; BFG193E6433XT; SP000010994

Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
700
600
550
500
450
400
350
300
250
200
150
100
50
-
0
2
1
0
10
0
/P
-7
totDC
20
10
-6
=
40
10
-5
(t
p
60
)
10
-4
80
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tot
-3
100
= (T
10
-2
120 °C
S
)
t
s
T
p
S
150
10
0
4
Permissible Pulse Load R
K/W
10
10
10
10
3
2
1
0
10
-7
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
-3
2007-04-20
10
=
-2
BFG193
(t
t
s
p
p
)
10
0