BT169H,412 NXP Semiconductors, BT169H,412 Datasheet - Page 3

THYRISTOR 800V 50MA TO92-3

BT169H,412

Manufacturer Part Number
BT169H,412
Description
THYRISTOR 800V 50MA TO92-3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT169H,412

Package / Case
TO-92-3 (Standard Body), TO-226
Scr Type
Sensitive Gate
Voltage - Off State
800V
Voltage - Gate Trigger (vgt) (max)
800mV
Voltage - On State (vtm) (max)
1.7V
Current - On State (it (av)) (max)
500mA
Current - On State (it (rms)) (max)
800mA
Current - Gate Trigger (igt) (max)
100µA
Current - Hold (ih) (max)
3mA
Current - Off State (max)
100µA
Current - Non Rep. Surge 50, 60hz (itsm)
9A, 10A
Mounting Type
Through Hole
Current - On State (it (rms) (max)
800mA
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
10 A
On-state Rms Current (it Rms)
0.8 A
Off-state Leakage Current @ Vdrm Idrm
0.05 mA
Gate Trigger Voltage (vgt)
0.3 V
Gate Trigger Current (igt)
50 uA
Holding Current (ih Max)
1.5 mA
Forward Voltage Drop
1.25 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061729412
NXP Semiconductors
BT169H_1
Product data sheet
Fig 1.
Fig 2.
I
P
(W)
TSM
(A)
tot
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
0
1
Total power dissipation as a function of average on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
= conduction angle
0.1
4
0.2
10
Rev. 01 — 31 March 2008
2.8
0.3
2.2
10
0.4
2
conduction
(degrees)
1.9
angle
120
180
30
60
90
Thyristor, logic level, high voltage
number of cycles
factor
form
1.57
2.8
2.2
1.9
a
4
0.5
I
T
T
j
(init) = 25 C max
a =
1.57
I
t
p
T(AV)
© NXP B.V. 2008. All rights reserved.
BT169H
001aab446
003aac212
(A)
I
TSM
t
10
0.6
3
77
89
101
113
125
T
( C)
lead(max)
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