BT169H,412 NXP Semiconductors, BT169H,412 Datasheet - Page 6

• Manufacturer Part Number: BT169H,412
• Description: THYRISTOR 800V 50MA TO92-3
• Manufacturer: NXP Semiconductors

Specifications of BT169H,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 100µA
• Current - Hold (ih) (max): 3mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 10 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 1.5 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061729412

NXP Semiconductors
6. Characteristics
Table 5.
T
BT169H_1
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
Fig 7.
T
GT
= 25 C unless otherwise specified.
V
D
GT(25 C)
/dt
V
GT
1.6
1.2
0.8
0.4
50
Normalized gate trigger voltage as a function
of junction temperature
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off time V
0
50
100
Conditions
V
V
see
V
see
I
V
V
V
exponential waveform; see
I
dI
V
R
T
I
TM
T
D
D
D
D
R
DM
D
R
GK
G
= 1.2 A; see
V
V
R
= 10 mA; see
/dt = 0.1 A/ s
001aab501
T
4= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 0.67 V
= 35 V; (dI
D
D
= 2 A; V
GK
Figure 10
Figure 11
j
= 1 k
= 0.67
( C)
= 12 V
= V
DRM(max)
RRM(max)
= 1 k
DRM(max)
150
Rev. 01 — 31 March 2008
G
G
D
T
DRM(max)
V
= V
T
= 0.5 mA; R
= 0.5 mA; R
/dt)
= 10 mA; see
; T
; T
Figure 9
DRM(max)
Figure 7
DRM(max)
; T
j
j
M
= 125 C; R
= 125 C; R
j
= 30 A/ s; dV
= 125 C
; T
Fig 8.
; T
j
I
= 125 C; I
GT(25 C)
; I
GK
GK
j
I
= 125 C;
G
Figure 12
GT
Figure 8
= 1 k ;
= 1 k ;
= 10 mA;
GK
GK
3
2
1
0
50
Normalized gate trigger current as a function
of junction temperature
D
= 1 k
= 1 k
/dt = 2 V/ s;
TM
= 1.6 A;
0
Thyristor, logic level, high voltage
50
Min
1
-
-
-
-
0.2
-
-
150
-
-
Typ
50
2
1.5
1.25
0.5
0.3
0.05
0.05
350
2
100
100
© NXP B.V. 2008. All rights reserved.
BT169H
001aab502
T
j
( C)
Max
100
6
3
1.7
0.8
-
0.1
0.1
-
-
-
150
Unit
mA
mA
V
V
V
mA
mA
V/ s
6 of 11
A
s
s