BT169H,412 NXP Semiconductors, BT169H,412 Datasheet - Page 5

• Manufacturer Part Number: BT169H,412
• Description: THYRISTOR 800V 50MA TO92-3
• Manufacturer: NXP Semiconductors

Specifications of BT169H,412

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 100µA
• Current - Hold (ih) (max): 3mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 9A, 10A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 10 A
• On-state Rms Current (it Rms): 0.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Gate Trigger Voltage (vgt): 0.3 V
• Gate Trigger Current (igt): 50 uA
• Holding Current (ih Max): 1.5 mA
• Forward Voltage Drop: 1.25 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061729412

NXP Semiconductors
5. Thermal characteristics
Table 4.
BT169H_1
Product data sheet
Symbol
R
R
Fig 6.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Transient thermal impedance from junction to lead as a function of pulse width
5
Thermal characteristics
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
10
4
10
3
Rev. 01 — 31 March 2008
Conditions
see
printed circuit board
mounted; lead length 4 mm
Figure 6
10
2
10
1
Min
-
-
Thyristor, logic level, high voltage
Typ
-
150
P
1
t
p
T
t
p
© NXP B.V. 2008. All rights reserved.
Max
60
-
(s)
BT169H
001aab451
=
t
T
t
p
10
Unit
K/W
K/W
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