MCR08BT1,115 NXP Semiconductors, MCR08BT1,115 Datasheet - Page 5

• Manufacturer Part Number: MCR08BT1,115
• Description: THYRISTOR 0.8A 200V SOT223
• Manufacturer: NXP Semiconductors
• Type: SCRr

Specifications of MCR08BT1,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Scr Type: Sensitive Gate
• Voltage - Off State: 200V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.7V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Repetitive Peak Off-state Volt: 200V
• Off-state Voltage: 200V
• Average On-state Current: 500mA
• Hold Current: 5mA
• Gate Trigger Current (max): 200uA
• Gate Trigger Voltage (max): 800mV
• Peak Reverse Gate Voltage: 5V
• Package Type: SC-73
• Peak Repeat Off Current: 100uA
• Peak Surge On-state Current (max): 9A
• On State Voltage(max): 1.7@1.2AV
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056931115; MCR08BT1 T/R; MCR08BT1 T/R

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 13513
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration
T
GT
= 25 C unless otherwise specified.
D
Z
/dt
(K/W)
th(j-sp)
10
10
10
10
1
2
1
2
10
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage current V
reverse current
critical rate of rise of
off-state voltage
gate controlled turn-on
time
circuit commutated
turn-off time
5
Characteristics
10
4
Conditions
V
Figure 8
V
Figure 10
V
Figure 11
I
I
V
V
waveform
I
dI
V
V
R
T
T
TM
D
D
D
D
R
DM
D
R
GK
G
V
V
R
gate open circuit
= 1.2 A; see
= 10 mA; gate open circuit; see
/dt = 0.1 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67 % V
= 35 V; dI
= 2 A; V
D
D
GK
= 67 % V
= 1 k
10
= 12 V
= V
DRM(max)
RRM(max)
= 1 k
3
DRM(max)
Rev. 03 — 29 November 2004
T
GT
GT
D
DRM(max)
TM
= 10 mA; gate open circuit; see
= V
DRM(max)
= 0.5 mA; R
= 0.5 mA; R
Figure 9
; T
; T
/dt = 30 A/ s; dV
DRM(max)
; T
j
j
= 125 C; R
= 125 C; R
j
; T
= 125 C
10
; T
j
= 125 C; I
j
2
; I
= 125 C; exponential
GK
GK
G
= 10 mA;
= 1 k ; see
= 1 k ; see
GK
GK
D
= 1 k
= 1 k
/dt = 2 V/ s;
Figure 7
TM
= 1.6 A;
10
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
0.2
-
-
500
-
-
-
P
1
MCR08BT1
t
p
Thyristor; logic level
Typ
50
2
2
1.25
0.5
0.3
0.05
0.05
800
25
2
100
T
t
p
(s)
001aac114
=
Max
200
6
5
1.7
0.8
-
0.1
0.1
-
-
-
-
t
T
t
p
10
Unit
mA
mA
V
V
V
mA
mA
V/ s
V/ s
A
s
s
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