BT258-800R,127 NXP Semiconductors, BT258-800R,127 Datasheet - Page 3

• Manufacturer Part Number: BT258-800R,127
• Description: THYRISTOR 800V 8A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT258-800R,127

• Package / Case: TO-220AB-3
• Scr Type: Sensitive Gate
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.6V
• Current - On State (it (av)) (max): 5A
• Current - On State (it (rms)) (max): 8A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 75A, 82A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 8A
• Breakover Current Ibo Max: 82 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934042960127; BT258-800R; BT258-800R

Philips Semiconductors
October 2002
Thyristors
logic level
Fig.2. Maximum permissible non-repetitive peak
8
6
4
2
0
Fig.1. Maximum on-state dissipation, P
Fig.3. Maximum permissible rms current I
9
8
7
6
5
4
3
2
1
0
-50
0
on-state current I
1000
P tot (W)
IT(RMS) / A
100
10
conduction
angle
degrees
10us
versus mounting base temperature T
60
90
120
180
average on-state current, I
ITSM / A
30
I
T
dI /dt limit
Tj initial = 25 C max
sinusoidal currents, t
T
a = form factor = I
form
factor
2.8
2.2
1.9
1.57
(a)
T
4
0
I TSM
time
2
4
100us
TSM
2.8
, versus pulse width t
BT258
Tmb / C
50
T / s
2.2
T(RMS)
4
p
1ms
1.9
T(AV)
/ I
10ms.
100
T(AV)
I T(AV) (A)
, where
T mb(max) (˚C)
.
111 C
a = 1.57
tot
, versus
mb
T(RMS)
p
, for
10ms
.
6
150
109
111
113
115
117
119
121
123
125
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
80
70
60
50
40
30
20
10
24
20
16
12
0
8
4
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
10
0.1
surge duration / s
, versus number of cycles, for
Tj / C
50
I
mb
T
Tj initial = 25 C max
100
Product specification
1
BT258 series
T
111˚C.
100
I TSM
time
Rev 2.000
1000
150
10
j
.