MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 13

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
MM3Z10VT1
MM3Z10VT1G
MM3Z10VT1H
MM3Z11VT1G
MM3Z12VST1G
MM3Z12VT1
MM3Z12VT1G
MM3Z13VT1G
MM3Z15VST1G
MM3Z15VT1
MM3Z15VT1G
MM3Z16VST1G
MM3Z16VT1G
MM3Z18VST1G
MM3Z18VT1
MM3Z18VT1G
MM3Z20VT1G
MM3Z22VST1G
MM3Z22VT1G
MM3Z24VT1G
MM3Z27VST1G
MM3Z27VT1G
MM3Z2V4T1G
MM3Z2V7T1G
MM3Z2V7T1H
MM3Z33VST1G
MM3Z33VT1G
MM3Z33VT3G
MM3Z36VT1G
MM3Z39VT1G
MM3Z3V0T1G
MM3Z3V3ST1G
MM3Z3V3T1G
MM3Z3V6T1G
MM3Z3V9ST1
MM3Z3V9ST1G
MM3Z3V9T1G
MM3Z43VT1
MM3Z43VT1G
MM3Z4V3ST1G
MM3Z4V3T1G
MM3Z4V7ST1G
MM3Z4V7ST3G
MM3Z4V7T1G
MM3Z5V1ST1G
MM3Z5V1T1G
MM3Z5V6ST1G
MM3Z5V6T1G
MM3Z6V2ST1G
MM3Z6V2T1G
MM3Z6V2T1H
MM3Z6V8ST1G
MM3Z6V8ST1H
MM3Z6V8T1
MM3Z6V8T1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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