MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 9

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
AFFECTED DEVICE LIST
BAS16HT1
BAS16HT1G
BAS16HT1H
BAS16HT3G
BAS20HT1G
BAS21AHT1G
BAS21HT1
BAS21HT1G
BAS40-04LT1
BAS40-04LT1G
BAS40-04LT1H
BAS40-06LT1G
BAS40LT1
BAS40LT1G
BAS40LT3G
BAS70-04LT1
BAS70-04LT1G
BAS70LT1
BAS70LT1G
BAT54ALT1
BAT54ALT1G
BAT54ALT1H
BAT54CLT1
BAT54CLT1G
BAT54CLT1H
BAT54CLT3G
BAT54HT1
BAT54HT1G
BAT54HT1H
BAT54LT1
BAT54LT1G
BAT54LT1H
BAT54SLT1
BAT54SLT1G
BAT54SLT1H
BAT54T1
BAT54T1G
BC846BDW1T1G
BC846BDW1T1H
BC846BPDW1T1G
BC847BDW1T1G
BC847BDW1T3
BC847BDW1T3G
BC847BPDW1T1
BC847BPDW1T1G
BC847BPDW1T2G
BC847CDW1T1
BC847CDW1T1G
BC847CDW1T1H
BC848CDW1T1G
BC848CPDW1T1G
BC856BDW1T1G
BC856BDW1T3
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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