MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 15

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
MMBZ5229BLT1G
MMBZ5229BLT1H
MMBZ5230BLT1G
MMBZ5230BLT1H
MMBZ5231BLT1
MMBZ5231BLT1G
MMBZ5231BLT1H
MMBZ5231BLT3G
MMBZ5231ELT1G
MMBZ5232BLT1
MMBZ5232BLT1G
MMBZ5232BLT1H
MMBZ5232BLT3G
MMBZ5232ELT1G
MMBZ5233BLT1G
MMBZ5233BLT1H
MMBZ5234BLT1
MMBZ5234BLT1G
MMBZ5234BLT1H
MMBZ5234ELT1G
MMBZ5235BLT1
MMBZ5235BLT1G
MMBZ5235BLT1H
MMBZ5236BLT1G
MMBZ5236BLT1H
MMBZ5237BLT1G
MMBZ5237BLT1H
MMBZ5237ELT1G
MMBZ5238BLT1G
MMBZ5239BLT1
MMBZ5239BLT1G
MMBZ5239BLT1H
MMBZ5239ELT1G
MMBZ5240BLT1
MMBZ5240BLT1G
MMBZ5240BLT1H
MMBZ5240ELT1G
MMBZ5241BLT1
MMBZ5241BLT1G
MMBZ5241BLT1H
MMBZ5241BLT3G
MMBZ5242BLT1
MMBZ5242BLT1G
MMBZ5242BLT1H
MMBZ5242ELT1G
MMBZ5243BLT1G
MMBZ5243BLT1H
MMBZ5244BLT1
MMBZ5244BLT1G
MMBZ5245BLT1
MMBZ5245BLT1G
MMBZ5245BLT3
MMBZ5245BLT3G
MMBZ5245ELT1G
MMBZ5246BLT1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 15 of 36