PMBT3946VPN,115 NXP Semiconductors, PMBT3946VPN,115 Datasheet

TRANS NPN/PNP 40V 200MA SOT666

PMBT3946VPN,115

Manufacturer Part Number
PMBT3946VPN,115
Description
TRANS NPN/PNP 40V 200MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3946VPN,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
240mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
180
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
200 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
240 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934063474115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1.
I
I
I
I
Table 2.
Type number
PMBT3946VPN
Symbol
Per transistor; for the PNP transistor with negative polarity
V
I
TR1 (NPN)
h
TR2 (PNP)
h
C
FE
FE
CEO
PMBT3946VPN
40 V, 200 mA NPN/PNP switching transistor
Rev. 01 — 31 August 2009
Double general-purpose switching transistor
Board-space reduction
Ultra small and flat lead SMD plastic package
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
DC current gain
Product overview
Quick reference data
Package
NXP
SOT666
Conditions
open base
V
I
V
I
C
C
CE
CE
JEITA
-
= 10 mA
= 10 mA
= 1 V;
= 1 V;
NPN/NPN
complement
PMBT3904VS
Min
-
-
100
100
Typ
-
-
180
180
Product data sheet
PNP/PNP
complement
PMBT3906VS
Max
40
200
300
300
Unit
V
mA

Related parts for PMBT3946VPN,115

PMBT3946VPN,115 Summary of contents

Page 1

PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 — 31 August 2009 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Type ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PMBT3946VPN 4. Marking Table 5. Type number PMBT3946VPN 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1 (NPN) V CBO TR2 (PNP) V CBO Per transistor; for the PNP transistor with negative polarity ...

Page 3

... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device P tot amb T stg [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Fig 1. ...

Page 4

... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) 0.75 (K/W) 0.5 0. 0.2 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table unless otherwise specified. amb ...

Page 5

... NXP Semiconductors Table unless otherwise specified. amb Symbol off TR2 (PNP) I CBO I EBO CEsat V BEsat off C c PMBT3946VPN_1 Product data sheet Characteristics …continued Parameter Conditions delay time mA; Bon rise time Boff turn-on time storage time fall time turn-off time collector capacitance ...

Page 6

... NXP Semiconductors Table unless otherwise specified. amb Symbol 600 h FE 400 (1) (2) 200 ( ( 150 C amb ( amb ( amb Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values PMBT3946VPN_1 Product data sheet Characteristics …continued Parameter Conditions emitter capacitance V = 500 mV; ...

Page 7

... NXP Semiconductors 1 (V) (1) 0.8 (2) ( amb ( amb ( 150 C amb Fig 5. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values ( 150 C amb ( amb ( amb Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PMBT3946VPN_1 Product data sheet 006aab117 ...

Page 8

... NXP Semiconductors 400 h FE (1) 300 200 (2) (3) 100 ( 150 C amb ( amb ( amb Fig 8. TR2 (PNP): DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 150 C amb Fig 10. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values ...

Page 9

... NXP Semiconductors (1) T (2) T (3) T Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; PMBT3946VPN_1 Product data sheet 1 V CEsat (V) ( (2) ( 150 C amb = 25 C amb = 55 C amb typical values Rev. 01 — 31 August 2009 PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor 006aab122 ...

Page 10

... NXP Semiconductors 8. Test information Fig 13. TR1 (NPN): Test circuit for switching times Fig 14. TR2 (PNP): Test circuit for switching times PMBT3946VPN_1 Product data sheet R (probe) oscilloscope 450 600 Oscilloscope: input impedance (probe) oscilloscope 450 600 Oscilloscope: input impedance Rev. 01 — 31 August 2009 ...

Page 11

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT666 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMBT3946VPN SOT666 [1] For further information and the availability of packing methods, see PMBT3946VPN_1 Product data sheet 1.7 1 ...

Page 12

... NXP Semiconductors 11. Soldering 2 1.7 Fig 16. Reflow soldering footprint SOT666 PMBT3946VPN_1 Product data sheet 2.75 2.45 2.1 1.6 0.538 0.55 1.075 (2 ) 1 Rev. 01 — 31 August 2009 PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor 0.4 0.3 0. 0.325 0.375 Dimensions 0 0. © NXP B.V. 2009. All rights reserved. ...

Page 13

... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PMBT3946VPN_1 20090831 PMBT3946VPN_1 Product data sheet 40 V, 200 mA NPN/PNP switching transistor Data sheet status Change notice Product data sheet - Rev. 01 — 31 August 2009 PMBT3946VPN Supersedes - © NXP B.V. 2009. All rights reserved. ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history ...

Related keywords