PMBT3946VPN,115 NXP Semiconductors, PMBT3946VPN,115 Datasheet - Page 5

• Manufacturer Part Number: PMBT3946VPN,115
• Description: TRANS NPN/PNP 40V 200MA SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMBT3946VPN,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 240mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 180
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 200 mA
• Maximum Dc Collector Current: 200 mA
• Power Dissipation: 240 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934063474115

NXP Semiconductors
PMBT3946VPN_1
Product data sheet
Table 8.
T
Symbol
t
t
t
t
t
t
C
C
f
NF
TR2 (PNP)
I
I
h
V
V
t
t
t
t
t
t
C
d
r
on
s
f
off
T
CBO
EBO
d
r
on
s
f
off
amb
FE
CEsat
BEsat
c
e
c
= 25 C unless otherwise specified.
Parameter
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance V
emitter capacitance
transition frequency
noise figure
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
collector capacitance V
Characteristics
Rev. 01 — 31 August 2009
…continued
Conditions
V
I
I
f = 1 MHz
V
I
V
f = 100 MHz
V
R
f = 10 Hz to 15.7 kHz
V
V
V
I
I
I
I
V
I
I
I
f = 1 MHz
Bon
Boff
C
C
C
C
C
C
Bon
Boff
CC
CB
EB
CE
CE
CB
EB
CE
CC
CB
S
I
I
I
I
I
= i
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 10 mA;
C
C
C
C
C
= 1 k ;
= 1 mA;
= 1 mA
= 1 mA;
= 1 mA
= 5 V; I
= 500 mV;
= 20 V; I
= 5 V; I
= 30 V; I
= 6 V; I
= 1 V
= 5 V; I
= 3 V; I
= 3 V;
= 0.1 mA
= 1 mA
= 10 mA
= 50 mA
= 100 mA
c
= 0 A; f = 1 MHz
E
C
C
E
C
C
40 V, 200 mA NPN/PNP switching transistor
= i
= 100 A;
= 10 mA;
E
B
B
B
B
= i
= 0 A
= 10 mA;
e
= 0 A
= 1 mA
= 5 mA
= 1 mA
= 5 mA
e
= 0 A;
= 0 A;
PMBT3946VPN
Min
-
-
-
-
-
-
-
-
300
-
-
-
60
80
100
60
30
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
180
180
180
130
50
-
-
-
-
-
-
-
100
165
750
850
© NXP B.V. 2009. All rights reserved.
Max
35
35
70
200
50
250
4
8
-
5
-
-
300
-
-
35
35
70
225
75
300
4.5
50
50
250
400
850
950
Unit
ns
ns
ns
ns
ns
ns
pF
pF
MHz
dB
nA
nA
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
pF
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