PMBT3946VPN,115 NXP Semiconductors, PMBT3946VPN,115 Datasheet - Page 3

TRANS NPN/PNP 40V 200MA SOT666

PMBT3946VPN,115

Manufacturer Part Number
PMBT3946VPN,115
Description
TRANS NPN/PNP 40V 200MA SOT666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3946VPN,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
240mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
180
Minimum Operating Temperature
- 55 C
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
200 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
240 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934063474115
NXP Semiconductors
6. Thermal characteristics
PMBT3946VPN_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
Per device
P
T
T
T
Symbol
Per transistor
R
R
Per device
R
Fig 1.
j
amb
stg
tot
th(j-a)
th(j-sp)
th(j-a)
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Per device: Power derating curves SOT666
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
(mW)
P
Rev. 01 — 31 August 2009
tot
400
300
200
100
0
…continued
75
25
25
Conditions
in free air
in free air
Conditions
T
40 V, 200 mA NPN/PNP switching transistor
amb
75
25 C
125
T
006aab604
amb
PMBT3946VPN
[1][2]
[1][2]
[1][2]
( C)
175
Min
-
-
Min
-
-
-
55
65
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
360
150
+150
+150
Max
521
100
347
Unit
mW
C
C
C
Unit
K/W
K/W
K/W
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